(出版日: 2002-04-22)
https://hdl.handle.net/20.500.11932/457944 
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NIMS成果物 |
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 オンラインリソース
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不明 |
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11 p.
(148 - 158)
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Handle URI: https://hdl.handle.net/20.500.11932/457944
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| アブストラクト: |
Single crystals of a novel boron-rich scandium borocarbosilicide
Sc0.83-xB10.0-yC0.17+ySi0.083-z were grown by the floating zone method using a four-xenon lamp mirror-type image furnace. Structure analysis using single-crystal X-ray diffraction data showed that Sc0.83-xB10.0-yC0.17+ySi0.083-z has a face centered cubic with lattice constant a=2.03085 nm and space group of F4-3m. The crystal composition calculated from the structure analysis was ScB12.0C0.65Si0.071 which agreed with the measured composition of ScB12.7C0.62Si0.08. In the crystal structure which is a new structure type of boron-rich borides, there are three structurally independent B12 icosahedra I(1), I(2) and I(3) and one B10 polyhedron which interconnect each other to form a three-dimensional boron framework. There are four fully occupied bridging sites, one is the C site and the other three sites are occupied statistically by B or C. The Sc atoms reside in three interstitial sites of the boron framework. Two Si sites are tetrahedrally surrounded by the bridging carbon sites and by the bridging boron/carbon mixed occupation sites, respectively. The boron framework structure can be understood more easily by introducing larger structure units, they are a super tetrahedra T(1) made up by four icosahedra I(1), a super tetrahedra T(2) made up by four icosahedra I(2) and a super octahedra O(1) made up by six icosahedra I(3). |
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